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d a t a sh eet product speci?cation supersedes data of 1996 oct 02 1997 nov 24 discrete semiconductors byv27 series ultra fast low-loss controlled avalanche rectifiers handbook, 2 columns m3d116
1997 nov 24 2 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series features glass passivated high maximum operating temperature low leakage current excellent stability guaranteed avalanche energy absorption capability available in ammo-pack. description rugged glass sod57 package, using a high temperature alloyed construction. this package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. fig.1 simplified outline (sod57) and symbol. 2/3 page (datasheet) mam047 ka limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v rrm repetitive peak reverse voltage byv27-50 - 50 v byv27-100 - 100 v byv27-150 - 150 v byv27-200 - 200 v byv27-300 - 300 v byv27-400 - 400 v byv27-500 - 500 v byv27-600 - 600 v v r continuous reverse voltage byv27-50 - 50 v byv27-100 - 100 v byv27-150 - 150 v byv27-200 - 200 v byv27-300 - 300 v byv27-400 - 400 v byv27-500 - 500 v byv27-600 - 600 v i f(av) average forward current t tp =85 c; lead length = 10 mm; see figs 2, 3 and 4; averaged over any 20 ms period; see also figs 14, 15 and 16 byv27-50 to 200 - 2.0 a byv27-300 and 400 - 1.9 a byv27-500 and 600 - 1.6 a i f(av) average forward current t amb =60 c; printed-circuit board mounting (see fig. 25); see figs 5, 6 and 7; averaged over any 20 ms period; see also figs 14, 15 and 16 byv27-50 to 200 - 1.30 a byv27-300 and 400 - 1.25 a byv27-500 and 600 - 1.10 a
1997 nov 24 3 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series electrical characteristics t j =25 c unless otherwise speci?ed. i frm repetitive peak forward current t tp =85 c; see figs 8, 9 and 10 byv27-50 to 400 - 20 a byv27-500 and 600 - 16 a i frm repetitive peak forward current t amb =60 c; see figs 11, 12 and 13 byv27-50 to 200 - 14 a byv27-300 and 400 - 13 a byv27-500 and 600 - 11 a i fsm non-repetitive peak forward current t = 10 ms half sine wave; t j =t j max prior to surge; v r =v rrmmax byv27-50 to 400 - 50 a byv27-500 and 600 - 40 a e rsm non-repetitive peak reverse avalanche energy l = 120 mh; t j =t j max prior to surge; inductive load switched off - 20 mj t stg storage temperature - 65 +175 c t j junction temperature see fig. 17 - 65 +175 c symbol parameter conditions min. typ. max. unit v f forward voltage i f = 2 a; t j =t j max ; see figs 18, 19 and 20 byv27-50 to 200 -- 0.78 v byv27-300 and 400 -- 0.82 v byv27-500 and 600 -- 1.00 v v f forward voltage i f =2a; see figs 18, 19 and 20 byv27-50 to 200 -- 0.98 v byv27-300 and 400 -- 1.05 v byv27-500 and 600 -- 1.25 v v (br)r reverse avalanche breakdown voltage i r = 0.1 ma byv27-50 55 -- v byv27-100 110 -- v byv27-150 165 -- v byv27-200 220 -- v byv27-300 330 -- v byv27-400 440 -- v byv27-500 560 -- v byv27-600 675 -- v i r reverse current v r =v rrmmax ; see fig. 21 -- 5 m a v r =v rrmmax ; t j = 165 c; see fig. 21 -- 150 m a symbol parameter conditions min. max. unit
1997 nov 24 4 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series thermal characteristics note 1. device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of cu-layer 3 40 m m, see fig. 25. for more information please refer to the general part of associated handbook . t rr reverse recovery time when switched from i f = 0.5 a to i r =1a; measured at i r = 0.25 a; see fig. 27 byv27-50 to 200 -- 25 ns byv27-300 to 600 -- 50 ns c d diode capacitance f = 1 mhz; v r =0; see figs 22, 23 and 24 byv27-50 to 200 - 100 - pf byv27-300 and 400 - 80 - pf byv27-500 and 600 - 65 - pf maximum slope of reverse recovery current when switched from i f = 1 a to v r 3 30 v and di f /dt = - 1a/ m s; see fig. 26 -- 4a/ m s symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 k/w r th j-a thermal resistance from junction to ambient note 1 100 k/w symbol parameter conditions min. typ. max. unit di r dt --------
1997 nov 24 5 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series graphical data byv27-50 to 200 a = 1.42; v r =v rrmmax ; d = 0.5. switched mode application. fig.2 maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 200 mga849 100 t ( c) o tp 0 i f(av) (a) 1.6 1.2 0.8 0.4 2.0 20 15 10 lead length (mm) byv27-300 and 400 a = 1.42; v r =v rrmmax ; d = 0.5. switched mode application. fig.3 maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 200 mlc293 100 t ( c) o tp 0 i f(av) (a) 1.6 1.2 0.8 0.4 2.0 lead length 10 mm fig.4 maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). byv27-500 and 600 a = 1.42; v r =v rrmmax ; d = 0.5. switched mode application. handbook, halfpage 0 200 0 1 2 3 i f(av) (a) 100 t tp ( c) mgk648 lead length 10 mm byv27-50 to 200 a = 1.42; v r =v rrmmax ; d = 0.5. device mounted as shown in fig. 25. switched mode application. fig.5 maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 0 mga848 100 i f(av) (a) t ( c) amb o 1.6 1.2 0.8 0.4 2.0
1997 nov 24 6 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series fig.6 maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). byv27-300 and 400 a = 1.42; v r =v rrmmax ; d = 0.5. device mounted as shown in fig. 25. switched mode application. handbook, halfpage 0 200 0 0.8 0.4 1.6 mlc294 100 i f(av) (a) t ( c) o 1.2 amb fig.7 maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). byv27-500 and 600 a = 1.42; v r =v rrmmax ; d = 0.5. device mounted as shown in fig. 25. switched mode application. handbook, halfpage 0 200 0 0.4 0.8 1.2 1.6 i f(av) (a) 100 t amb ( c) mgk649 byv27-50 to 200 t tp =85 c; r th j-tp = 46 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 200 v. fig.8 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 0 8 10 2 11010 2 10 3 10 4 mlc297 16 t (ms) p 10 1 i frm (a) 4 12 20 d = 0.05 0.1 0.2 0.5 1
1997 nov 24 7 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series byv27-300 and 400 t tp =85 c; r th j-tp = 46 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 400 v. fig.9 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 0 8 10 2 11010 2 10 3 10 4 mlc299 16 t (ms) p 10 1 i frm (a) 4 12 20 d = 0.05 0.1 0.2 0.5 1 byv27-500 and 600 t tp =85 c; r th j-tp = 46 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 600 v. fig.10 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 0 12 10 4 10 3 10 2 10 1 10 - 1 10 - 2 mgk650 t p (ms) i frm (a) 8 4 16 20 d = 0.05 0.1 0.2 1 0.5
1997 nov 24 8 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series byv27-50 to 200 t amb =60 c; r th j-a = 100 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 200 v. fig.11 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 0 8 10 2 11010 2 10 3 10 4 mlc298 16 t (ms) p 10 1 i frm (a) 4 12 d = 0.05 0.1 0.2 0.5 1 byv27-300 and 400 t amb =60 c; r th j-a = 100 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 400 v. fig.12 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 0 8 10 2 11010 2 10 3 10 4 mlc300 16 t (ms) p 10 1 i frm (a) 4 12 d = 0.05 0.1 0.2 0.5 1
1997 nov 24 9 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series byv27-500 and 600 t amb =60 c; r th j-a = 100 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 600 v. fig.13 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 0 12 10 4 10 3 10 2 10 1 10 - 1 10 - 2 mgk651 t p (ms) i frm (a) 8 4 16 20 d = 0.05 0.1 1 0.5 0.2 byv27-50 to 200 a=i f(rms) /i f(av) ; v r =v rrmmax ; d = 0.5. fig.14 maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. handbook, halfpage 0 mga870 2.4 0 1.6 1.2 0.8 0.4 2.0 p (w) i (a) f(av) 12 a = 3 2.5 2 1.57 1.42 byv27-300 and 400 a=i f(rms) /i f(av) ; v r =v rrmmax ; d = 0.5. fig.15 maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. handbook, halfpage 0 mlc292 2.4 0 1.6 1.2 2.0 0.8 0.4 p (w) i (a) f(av) 12 a = 3 2.5 2 1.57 1.42
1997 nov 24 10 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series fig.16 maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. byv27-500 and 600 a=i f(rms) /i f(av) ; v r =v rrmmax ; d = 0.5. handbook, halfpage 0 mgk652 2.0 0 1.2 0.8 0.4 1.6 p (w) i f(av) (a) 12 2.5 2 1.57 1.42 a = 3 solid line = v r . dotted line = v rrm ; d = 0.5. fig.17 maximum permissible junction temperature as a function of maximum reverse voltage percentage. handbook, halfpage 0 100 200 0 100 50 v r (%v rmax ) t j ( c) mgk645 byv27-50 to 200 dotted line: t j = 175 c. solid line: t j =25 c. fig.18 forward current as a function of forward voltage; maximum values. handbook, halfpage 02 6 0 2 4 mga864 1 i f (a) v (v) f byv27-300 and 400 dotted line: t j = 175 c. solid line: t j =25 c. fig.19 forward current as a function of forward voltage; maximum values. handbook, halfpage 02 6 0 2 4 mlc291 1 i f (a) v (v) f
1997 nov 24 11 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series byv27-500 and 600 dotted line: t j = 175 c. solid line: t j =25 c. fig.20 forward current as a function of forward voltage; maximum values. handbook, halfpage 02 6 0 2 4 mbh649 1 i f (a) v (v) f v r =v rrmmax . fig.21 reverse current as a function of junction temperature; maximum values. handbook, halfpage mgc550 0 100 200 10 3 10 2 10 1 ( m a) i r t j ( c) byv27-50 to 200 f = 1 mhz; t j =25 c. fig.22 diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 1 mlc295 10 10 2 10 3 1 10 2 10 v (v) r c d (pf) byv27-300 and 400 f = 1 mhz; t j =25 c. fig.23 diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 1 mlc296 10 10 2 10 3 1 10 2 10 v (v) r c d (pf)
1997 nov 24 12 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series fig.24 diode capacitance as a function of reverse voltage; typical values. byv27-500 and 600 f = 1 mhz; t j =25 c. handbook, halfpage 1 mgk653 10 10 2 10 3 1 10 2 10 v r (v) c d (pf) fig.25 device mounted on a printed-circuit board. dimensions in mm. handbook, halfpage mga200 3 2 7 50 25 50 fig.26 reverse recovery definitions. n dbook, halfpage 10% 100% di dt t t rr i f i r mgc499 f di dt r
1997 nov 24 13 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series fig.27 test circuit and reverse recovery time waveform and definition. input impedance oscilloscope: 1 m w , 22 pf; t r 7 ns. source impedance: 50 w ; t r 15 ns. handbook, full pagewidth 10 w 1 w 50 w 25 v dut mam057 + t rr 0.5 0 0.5 1.0 i f (a) i r (a) t 0.25
1997 nov 24 14 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. references outline version european projection issue date iec jedec eiaj note 1. the marking band indicates the cathode. sod57 97-10-14 hermetically sealed glass package; axial leaded; 2 leads sod57 unit b max. mm 0.81 d max. g max. 28 4.57 3.81 l min. dimensions (mm are the original dimensions) g l d l b 0 2.5 5 mm scale k a (1)
1997 nov 24 15 philips semiconductors product speci?cation ultra fast low-loss controlled avalanche recti?ers byv27 series notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca56 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, 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